 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 1T412 Variable Capacitance Diode Description The 1T412 is a variable capacitance diode designed for electronic tuning of BS tuners using a super-small-miniature flat package (SSVC). Features * Super-small-miniature flat package * Low series resistance: 1.8 Max. (f=470 MHz) * Large capacitance ratio: 5.7 Typ. (C2/C25) * Small leakage current: 10 nA Max. (VR=28 V) * Capacitance deviation in a matching group: within 5 % Applications Electronic tuning of BS tuners Structure Silicon epitaxial planar type diode M-290 Absolute Maximum Ratings (Ta=25 C) * Reverse voltage VR 30 V * Peak reverse voltage VRM 35 V (RL 10 k) * Operating temperature Topr -20 to +75 C * Storage temperature Tstg -65 to +150 C Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR C2 C25 C2/C25 rs C Conditions VR=28 V VR=2 V, f=1 MHz VR=25 V, f=1 MHz VR=1V, f=470 MHz VR=2 to 25 V, f=1 MHz Min. Typ. Max. 10 4.51 0.77 5.7 1.1 1.8 5 (Ta=25 C) Unit nA pF pF % 3.27 0.57 5.0 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. --1-- E96147A67-TE 1T412 Diode capacitance vs. Reverse voltage 10 Ta=25C 5 100 Reverse current vs. Ambient temperature VR=28V C-Diode capacitance (pF) 2 1 0.5 10 0.2 0.1 1 2 5 10 20 VR-Reverse voltage (V) 50 IR-Reverse current (pA) 1 0.1 -20 0 20 40 60 Ta-Ambient temperature (C) 80 Forward voltage vs. Ambient temperature 0.90 45 Reverse voltage vs. Ambient temperature VF-Forward voltage (V) VR-Reverse voltage (V) IF=1mA 0.80 IR=10A 40 0.70 35 0.60 -20 0 20 40 60 Ta-Ambient temperature (C) 80 30 -20 0 20 40 60 Ta-Ambient temperature (C) 80 --2-- 1T412 Diode capacitance vs. Ambient temperature 1.03 VR=1V C (Ta)/C (25C)-Diode capacitance 1.02 VR=2V VR=7V VR=25V VR=15V 1.01 1.00 0.99 0.98 -20 0 20 40 60 Ta-Ambient temperature (C) 80 Reverse current vs. Reverse voltage 100 Ta=80C 1000 Temperature coefficient of diode capacitance Temperature coefficient (ppm/C) 500 IR-Reverse current (pA) 10 200 Ta=60C 100 1 50 1 2 5 10 VR-Reverse voltage (V) 20 50 Ta=25C 0.1 1 3 10 30 VR-Reverse voltage (V) --3-- 1T412 Package Outline Unit : mm M290 3}0. 1 1. A 7}0. 1 1. 0. 0. 1 8} 2 0. M A 10KM AX b c 10K AX M 7}0. 1 0. BASE M ETAL W I PLATI G TH N c b 0. 11}0. 005 0. 3}0. 025 0. {0. 05 11|0. 01 0. {0. 05 3|0. 02 PAC KAG E M ATER I AL SO N Y C O D E EI C O D E AJ JED EC C O D E M290 LEAD TR EATM EN T LEAD M ATER I AL PAC KAG E W EI H T G EPO XY R ESI N SO LD ER PLATI G N C O PPER 0. 002g Mark 1 X2 1 : Cathode 2 2 : Anode --4-- 2}0. 05 0. |
Price & Availability of 1T412
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |